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## Development and research of transistor microwave power detectors for radiometers

Transactions of IAA RAS, issue 24, 238–243 (2012)

S. I. Ivanov, A. P. Lavrov, Y. A. Matveev . Development and research of transistor microwave power detectors for radiometers // Transactions of IAA RAS. — 2012. — Issue 24. — P. 238–243. @article{ivanov2012, abstract = {Performed development and research works were focused on transistor microwave power detectors with increased dynamic range of its transfer characteristic, owing to negative feedback usage. Optimization of the depth of feedback gave the expansion of the dynamic range up to 49 dB (at 1 dB compression), which is significantly greater than that of known detectors, both industrial and individual pilot projects. Two variants for detectors - as bipolar, so field effect transistors were explored and its comparison is provided. The values of detectors main parameters: tangential sensitivity, transfer coefficient, transfer characteristic compression point, frequency response function, standing wave ratio, temperature coefficient are given. Frequency range of detectors - up to 1.5 GHz. Measured performances of the detectors samples are consistent with the theoretical analysis and circuit simulation in the modern specialized software AWR Microwave Office. The developed transistor detectors are offered for use in radio astronomy modulation type receivers.}, author = {S.~I. Ivanov and A.~P. Lavrov and Y.~A. Matveev}, issue = {24}, journal = {Transactions of IAA RAS}, keyword = {modulation radioastronomical receiver, transistor detector, quadratic detection range}, pages = {238--243}, title = {Development and research of transistor microwave power detectors for radiometers}, url = {http://iaaras.ru/en/library/paper/857/}, year = {2012} } TY - JOUR TI - Development and research of transistor microwave power detectors for radiometers AU - Ivanov, S. I. AU - Lavrov, A. P. AU - Matveev, Y. A. PY - 2012 T2 - Transactions of IAA RAS IS - 24 SP - 238 AB - Performed development and research works were focused on transistor microwave power detectors with increased dynamic range of its transfer characteristic, owing to negative feedback usage. Optimization of the depth of feedback gave the expansion of the dynamic range up to 49 dB (at 1 dB compression), which is significantly greater than that of known detectors, both industrial and individual pilot projects. Two variants for detectors - as bipolar, so field effect transistors were explored and its comparison is provided. The values of detectors main parameters: tangential sensitivity, transfer coefficient, transfer characteristic compression point, frequency response function, standing wave ratio, temperature coefficient are given. Frequency range of detectors - up to 1.5 GHz. Measured performances of the detectors samples are consistent with the theoretical analysis and circuit simulation in the modern specialized software AWR Microwave Office. The developed transistor detectors are offered for use in radio astronomy modulation type receivers. UR - http://iaaras.ru/en/library/paper/857/ ER -